365 nm 및 385 nm SMD LED왿� TIR 바형 렌즈를 이용하는 고밀도 고균일성 특성의 경화용 광원모듈 제작 (Fabrication of High Density and High Uniformity Irradiation Light Source for Exposure Curing System Using 365 nm and 385 nm Wavelength SMD LED and High Transmittance Silicone Resin TIR Bar Type Lens)

An irradiator is developed using two UVA wavelength ranges of SMD LEDs as a curing light source. This module has dimensions of 545×111×300 mm3 and is equipped with a TIR bar-shaped lens made of PDMS silicone resin. The developed irradiator offers high uniformity, with 89% in the centerline of the horizontal axis direction, for two different wavelength ranges of 365 nm and 385 nm. The radiation intensity from the light source module shows highly directional characteristics, and the irradiator provides a maximum irradiance of 1,634 mW/cm2 at a working distance of 50 mm. During the initial 5 minutes of operation, the irradiance experiences a rapid decrease. However, this issue is addressed by optimizing the LED’s current reduction characteristics and managing the Transistor’s temperature rise in the constant current circuit. After continuous operation for approximately 60 minutes. The highest temperature, near the central part of the irradiating surface, reaches 69.7℃, while the lowest temperature, near the edges, is 41.1℃.

An irradiator is developed using two UVA wavelength ranges of SMD LEDs as a curing light source. This module has dimensions of 545×111×300 mm3 and is equipped with a TIR bar-shaped lens made of PDMS silicone resin. The developed irradiator offers high uniformity, with 89% in the centerline of the horizontal axis direction, for two different wavelength ranges of 365 nm and 385 nm. The radiation intensity from the light source module shows highly directional characteristics, and the irradiator provides a maximum irradiance of 1,634 mW/cm2 at a working distance of 50 mm. During the initial 5 minutes of operation, the irradiance experiences a rapid decrease. However, this issue is addressed by optimizing the LED’s current reduction characteristics and managing the Transistor’s temperature rise in the constant current circuit. After continuous operation for approximately 60 minutes. The highest temperature, near the central part of the irradiating surface, reaches 69.7℃, while the lowest temperature, near the edges, is 41.1℃.