SILVER
SILVER ๋“ฑ๊ธ‰์˜ ํŒ๋งค์ž ์ž๋ฃŒ

[๋ฌผ๋้ฉ์ „์ž2] ๊ณผ์ œ5 ๋‚ด์šฉ ์š”์•ฝ Load line๋ถ€ํ„ฐ (6๋‹จ์›)

Solid State Electronic Devices By Ben Streetman & Sanjay Banerjee Seventh Edition (2016) ์ฑ…์„ ๊ธฐ๋ฐ˜์œผ๋กœ ํ•œ ๊ด‘์šด๋Œฟ’ํ•™๊ป“ ๋ฌผ๋้ฉ์ „์ž2 ์ˆ˜์—…์˜ 5๋ฒˆ์งธ ๊ณผ์ œ์ž…๋‹ˆ๋‹ค. Ch.6 FET์— ๋Œ€ํ•ด Load line๋ถ€ํ„ฐ์˜ ๋‚ด์šฉ์„ ๋‹ด์•˜์Šต๋‹ˆ๋‹ค. ํ•ด๋‹น ๊ณผ์ œ๋ฌผ๋“ค๊ณผ ํ•จ๊ป˜ A+๋ฅผ ๋ฐ›์€ ์ž๋ฃŒ์ž…๋‹ˆ๋‹ค.
7 ํŽ˜์ด์งฟ’
์›Œ๋“œ
์ตœ์ดˆ๋“ฑ๋ก์ผ 2023.12.21 ์ตœ์ข…์ ฟ’์ž‘์ผ 2023.11
7P ๋ฏธ๋้ฉ๋ณด๊ธฐ
[๋ฌผ๋้ฉ์ „์ž2] ๊ณผ์ œ5 ๋‚ด์šฉ ์š”์•ฝ Load line๋ถ€ํ„ฐ (6๋‹จ์›)
  • ๋ฏธ๋้ฉ๋ณด๊ธฐ

    ์†Œ๊ฐœ

    Solid State Electronic Devices By Ben Streetman & Sanjay Banerjee Seventh Edition (2016)
    ์ฑ…์„ ๊ธฐ๋ฐ˜์œผ๋กœ ํ•œ ๊ด‘์šด๋Œฟ’ํ•™๊ป“ ๋ฌผ๋้ฉ์ „์ž2 ์ˆ˜์—…์˜ 5๋ฒˆ์งธ ๊ณผ์ œ์ž…๋‹ˆ๋‹ค.

    Ch.6 FET์— ๋Œ€ํ•ด Load line๋ถ€ํ„ฐ์˜ ๋‚ด์šฉ์„ ๋‹ด์•˜์Šต๋‹ˆ๋‹ค.
    ํ•ด๋‹น ๊ณผ์ œ๋ฌผ๋“ค๊ณผ ํ•จ๊ป˜ A+๋ฅผ ๋ฐ›์€ ์ž๋ฃŒ์ž…๋‹ˆ๋‹ค.

    ๋ชฉ์ฐจ

    1 - a. For figure 6-2, significance and purpose of load line
    1 - b. For figure 6-2, purpose of VG in 6-2(a), 6-2(b)?

    2. For figure 6-3, how JFET can be controlled in terms of biasing among S, G & D

    3 - a. For figure 6-4, what is pinch-off
    3 โ€“ b. For figure 6-4, how about the current ID beyond pinch-off if VD increases?

    4. For figure 6-5, if you increase VG, what is the result?

    5. equation for ID before the pinch-off

    6. equation for ID after the pinch-off

    7. For figure 6-7, explain the operational principle of MEtal-Semiconductor junction FET. (how and why it can be turned on&off.

    8. For figure 6-8, show how the HEMT can be constructed. (how mobility and carrier concentration can be increased)

    9 - a. For figure 6-10, Explain the on & off for n-type, p-type MOSFET regarding VG.
    9 โ€“ b. For figure 6-10, Explain the on & off states the enhancement type n-channel MOSFET in terms of the band diagram along channel. (band diagram along channel with VG)

    10. For figure 6-11, Explain 3 different operating conditions in terms of ID. (show how the ID responds to each condition)

    11. For figure 6-12, Explain 4 different band diagrams for the ideal MOS structure in regard to the degree of P-type semiconductor as discussed in the class. In other words, explain the hole carrier concentrations at the metal and semiconductor interface.

    12. For figure 6-13, explain Equ. 6.15 in terms of Fig. 6.-13. What does the Equ. 6.15 indicate?

    13 - a. For figure 6-15, What is the maximum value of the depletion width under the stronger inversion? Write the regarding equation from the chapter.
    13 โ€“ b. For figure 6-15, What is the ideal threshold voltage? Write the regarding equation from the chapter

    14 - a. For figure 6-16, What is the total capacitance? Write the regarding equation from the chapter.
    14 - b. For figure 6-16, What is the insulator capacitance Ci? Write the regarding equation from the chapter.
    14 - c. For figure 6-16, What is the depletion (layer) capacitance Cd? Write the regarding equation from the chapter.

    15. For figure 6-18 & 19, what does the Equ. 6.37 indicate? In other words, why both terms are negative.

    16 โ€“ a. For figure 6-20, Explain the VT(V) in terms of doping level for P- & N-type of semiconductors. In other words, explain the sign of VT for P & N type of semiconductors.
    16 โ€“ b. For figure 6-20, Explain what does the negative VT means for n-channel?

    17. Solve Example 6-1 for Na = 5 x 1017cm-3& Qi = 4 x 1015 qC/cm2 for n-channel MOS transistor. Find
    Ci and Cmin on the C-V characteristics, and find Wm, VFB, and VT.

    18. Identification of source of data

    ๋ณธ๋ๅฉ๋‚ด์šฉ

    1 - a. For figure 6-2, significance and purpose of load line
    To predict the current values output in response to externally applied voltage, a load line is necessary. While it is possible to graphically represent the internal values of a transistor, such as vD and iD, through experimentation, expressing them in mathematical equations can be challenging. In this case, the intersection point on the graph of the equation E = iDR + vD and the transistor's I-V characteristic, when both are plotted on the same graph, becomes the steady-state value of the current and voltage.

    1 - b. For figure 6-2, purpose of VG in 6-2(a), 6-2(b)?
    In Fig. 6-2(b), it can be observed that iD and vD vary with VG. As VG increases, the steady-state value of the current increases while the voltage decreases. Conversely, as VG decreases, the current decreases, and the voltage increases. In other words, increasing VG leads to a higher current, turning on the transistor, while decreasing VG results in reduced current, turning it off.

    ์ฐธ๊ณ ์ž๋ฃŒ

    ยท ์—†์Œ
  • ์ž๋ฃŒํ›„๊ธฐ

    Ai ๋ฆฌ๋ทฐ
    ์งฟ’์‹ํŒ๋งค์ž๊ฐ€ ๋“ฑ๋กํ•œ ์ž๋ฃŒ๋Š” ์ฃผ์ œ์— ๋Œ€ํ•œ ๊นŠ์ด ์žˆ๋Š” ๋ถ„์„์ด ๋‹๋ณด์ž…๋‹ˆ๋‹ค. ๊ณผ์ œ๋ฅผ ์ž‘์„ฑํ•˜๋Š” ๋ฐ ํฐ ๋„์›€์ด ๋˜์—ˆ์Šต๋‹ˆ๋‹ค. ์•ž์œผ๋กœ๋„ ์ด๋Ÿฐ ์ข‹์€ ์ž๋ฃŒ๊ฐ€ ๋งŽ์ด ๋“ฑ๋ก๋˜๊ธฐ๋ฅผ ๊ธฐ๋Œ€ํ•ฉ๋‹ˆ๋‹ค.
    • ์ž์ฃผ๋ฌป๋Š”์งˆ๋ๅฉ์˜ ๋‹ต๋ณ€์„ ํ™•์ธํ•ด ์ฃผ์„ธ์š”

      ํ•ดํ”ผ์บ ํผ์Šค FAQ ๋”๋ต–๊ธฐ

      ๊ผญ ์•Œ์•„์ฃผ์„ธ์š”

      • ์ž๋ฃŒ์˜ ์ •๋ณด ๋ฐ ๋‚ด์šฉ์˜ ์ง„์‹ค์„ฑ์— ๋Œ€ํ•˜์—ฌ ํ•ดํ”ผ์บ ํผ์Šค๋Š” ๋ณด์ฆํ•˜์ง€ ์•Š์œผ๋ฉฐ, ํ•ด๋‹น ์ •๋ณด ๋ฐ ๊ฒŒ์‹œ๋ฌผ ์ €์ž‘๊ถŒ๊ณผ ๊ธฐํƒ€ ๋ฒ•์  ์ฑ…์ž„์€ ์ž๋ฃŒ ๋“ฑ๋ก์ž์—๊ฒŒ ์žˆ์Šต๋‹ˆ๋‹ค.
        ์ž๋ฃŒ ๋ฐ ๊ฒŒ์‹œ๋ฌผ ๋‚ด์šฉ์˜ ๋ถˆ๋ฒ•์  ์ด์šฉ, ๋ฌด๋‹จ ์ „์žฌโˆ™๋ฐฐํฌ๋Š” ๊ธˆ์ง€๋˜์–ด ์žˆ์Šต๋‹ˆ๋‹ค.
        ์ €์ž‘๊ถŒ์นจํ•ด, ๋ช…์˜ˆํ›ผ์† ๋“ฑ ๋ถ„์Ÿ ์š”์†Œ ๋ฐœ๊ฒฌ ์‹œ ๊ณ ๊ฐ๋น„๋ฐ”์นด์ง€๋…ธ Viva์˜ ์ €์ž‘๊ถŒ์นจํ•ด ์‹ ๊ณ ๋น„๋ฐ”์นด์ง€๋…ธ Viva๋ฅผ ์ด์šฉํ•ด ์ฃผ์‹œ๊ธฐ ๋ฐ”๋ž๋‹ˆ๋‹ค.
      • ํ•ดํ”ผ์บ ํผ์Šค๋Š” ๊ตฌ๋งค์ž์™ฟ’ ํŒ๋งค์ž ๋ชจ๋‘๊ฐ€ ๋งŒ์กฑํ•˜๋Š” ์„œ๋น„์Šค๊ฐ€ ๋˜๋„๋ก ๋…ธ๋ ฅํ•˜๊ณ  ์žˆ์œผ๋ฉฐ, ์•„๋ž˜์˜ 4๊ฐ€์ง€ ์ž๋ฃŒํ™˜๋ถˆ ์กฐ๊ฑด์„ ๊ผญ ํ™•์ธํ•ด์ฃผ์‹œ๊ธฐ ๋ฐ”๋ž๋‹ˆ๋‹ค.
        ํŒŒ์ผ์˜ค๋ฅ˜ ์ค‘๋ณต์ž๋ฃŒ ์ €์ž‘๊ถŒ ์—†์Œ ์„ค๋ช…๊ณผ ์‹ค์ œ ๋‚ด์šฉ ๋ถˆ์ผ์น˜
        ํŒŒ์ผ์˜ ๋‹ค์šด๋กœ๋“œ๊ฐ€ ์ œ๋Œ€๋กœ ๋˜์ง€ ์•Š๊ฑฐ๋‚˜ ํŒŒ์ผํ˜•์‹์— ๋งž๋Š” ํ”„๋กœ๊ทธ๋žจ์œผ๋กœ ์ •์ƒ ์ž‘๋™ํ•˜์ง€ ์•Š๋Š” ๊ฒฝ์šฐ ๋‹ค๋ฅธ ์ž๋ฃŒ์™ฟ’ 70% ์ด์ƒ ๋‚ด์šฉ์ด ์ผ์น˜ํ•˜๋Š” ๊ฒฝ์šฐ (์ค‘๋ณต์ž„์„ ํ™•์ธํ•  ์ˆ˜ ์žˆ๋Š” ๊ทผ๊ฑฐ ํ•„์š”ํ•จ) ์ธํ„ฐ๋„ท์˜ ๋‹ค๋ฅธ ์‚ฌ์ดํŠธ, ์—ฐ๊ตฌ๊ธฐ๊ด€, ํ•™๊ป“, ์„œ์  ๋“ฑ์˜ ์ž๋ฃŒ๋ฅผ ๋„์šฉํ•œ ๊ฒฝ์šฐ ์ž๋ฃŒ์˜ ์„ค๋ช…๊ณผ ์‹ค์ œ ์ž๋ฃŒ์˜ ๋‚ด์šฉ์ด ์ผ์น˜ํ•˜์ง€ ์•Š๋Š” ๊ฒฝ์šฐ

    ์ฐพ์œผ์‹œ๋˜ ์ž๋ฃŒ๊ฐ€ ์•„๋‹Œ๊ฐ€์š”?

    ์ง€๊ธˆ ๋ณด๋Š” ์ž๋ฃŒ์™ฟ’ ์—ฐ๊ด€๋˜์–ด ์žˆ์–ด์š”!
    ์™ผ์ชฝ ํ™”์‚ดํ‘œ
    ์˜ค๋ฅธ์ชฝ ํ™”์‚ดํ‘œ
    ๋ฌธ์„œ ์ดˆ์•ˆ์„ ์ƒ์„ฑํ•ด์ฃผ๋Š” EasyAI
    ์•ˆ๋…•ํ•˜์„ธ์š”. ํ•ดํ”ผ์บ ํผ์Šค์˜ ๋ฐฉ๋Œ€ํ•œ ์ž๋ฃŒ ์ค‘์—์„œ ์„ ๋ณ„ํ•˜์—ฌ ๋‹น์‹ ๋งŒ์˜ ์ดˆ์•ˆ์„ ๋งŒ๋“ค์–ด์ฃผ๋Š” EasyAI ์ž…๋‹ˆ๋‹ค.
    ์ €๋Š” ์•„๋ž˜์™ฟ’ ๊ฐ™์ด ์ž‘์—…์„ ๋„์™ฟ’๋“œ๋ฆฝ๋‹ˆ๋‹ค.
    - ์ฃผ์ œ๋งŒ ์ž…๋ ฅํ•˜๋ฉด ๋ชฉ์ฐจ๋ถ€ํ„ฐ ๋ณธ๋ๅฉ๋‚ด์šฉ๊นŒ์ง€ ์ž๋™ ์ƒ์„ฑํ•ด ๋“œ๋ฆฝ๋‹ˆ๋‹ค.
    - ์žฅ๋ฌธ์˜ ์ฝ˜ํ…์ธ ๋ฅผ ์‰ฝ๊ณ  ๋น ๋ฅด๊ฒŒ ์ž‘์„ฑํ•ด ๋“œ๋ฆฝ๋‹ˆ๋‹ค.
    - ์Šคํ† ์–ด์—์„œ ๋ฌด๋ฃŒ ์บ์‹œ๋ฅผ ๊ณ„์ •๋ณ„๋กœ 1ํšŒ ๋ฐœ๊ธ‰ ๋ฐ›์„ ์ˆ˜ ์žˆ์Šต๋‹ˆ๋‹ค. ์ง€๊ธˆ ๋ฐ”๋กœ ์ฒดํ—˜ํ•ด ๋ณด์„ธ์š”!
    ์ด๋Ÿฐ ์ฃผ์ œ๋“ค์„ ์ž…๋ ฅํ•ด ๋ณด์„ธ์š”.
    - ์œ ์•„์—๊ฒŒ ์ ํ•ฉํ•œ ๋ฌธํ•™์ž‘ํ’ˆ์˜ ๊ธฐ์ค€๊ณผ ํŠน์„ฑ
    - ํ•œ๊ตญ์ธ์˜ ๊ฐ€์น˜๊ด€ ์ค‘์—์„œ ์ •์‹ ์  ๊ฐ€์น˜๊ด€์„ ์ด๋ฃจ๋Š” ๊ฒƒ๋“ค์„ ๋ฌธํ™”์  ๋ฌธ๋ฒ•์œผ๋กœ ์ •๋ฆฌํ•˜๊ณ , ํ˜„๋Œ€ํ•œ๊ตญ์‚ฌํšŒ์—์„œ ์ผ์–ด๋‚˜๋Š” ์‚ฌ๊ฑด๊ณผ ์‚ฌ๊ณ ๋ฅผ ๋น„๊ตํ•˜์—ฌ ์ž์‹ ์˜ ์˜๊ฒฌ์œผ๋กœ ๊ธฐ์ˆ ํ•˜์„ธ์š”
    - ์ž‘๋ณ„์ธ์‚ฌ ๋…ํ›„๊ฐ
    ํ•ด์บ  AI ์ฑ—๋ด‡๊ณผ ๋Œ€ํ™”ํ•˜๊ธฐ
    ์ฑ—๋ด‡์œผ๋กœ ๊ฐ„ํŽธํ•˜๊ฒŒ ์ƒ๋‹ดํ•ด๋ณด์„ธ์š”.
    2025๋…„ 06์›” 08์ผ ์ผ์š”์ผ
    AI ์ฑ—๋ด‡
    ์•ˆ๋…•ํ•˜์„ธ์š”. ํ•ดํ”ผ์บ ํผ์Šค AI ์ฑ—๋ด‡์ž…๋‹ˆ๋‹ค. ๋ฌด์—‡์ด ๊ถ๊ธˆํ•˜์‹ ๊ฐ€์š”?
    2:13 ์˜ค์ „